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| 6 -10V -6V -4.5V -4V 4 -3.5V -3V 2 -2.5V Vgs=-2.0V 4 25C Vds=-5V 3 125C -Id (A) -Id (A) 4 5 2 1 0 0 1 2 3 -Vds (Volts) Fig 1: On-Region Characteristics 900 Vgs=-1.8V 800 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -Vgs(Volts) Figure 2: Transfer Characteristics 1.6 Vgs=-1.8V Normalized On-Resistance Id=-0.4A 1.4 Vgs=-2.5V Id=-0.5A 1.2 Vgs=-4.5V Id=-0.6A 1 Rds(on) (m:) 700 Vgs=-2.5V 600 500 400 300 0 1 2 3 4 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Vgs=-4.5V 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 900 Id=-0.6A 800 1.0E+00 1.0E-01 125C 1.0E-02 Rds(on) (m:) 700 -Is (A) 600 500 400 300 0 2 4 125C 25C 1.0E-03 1.0E-04 1.0E-05 1.0E-06 25C 6 8 10 0.0 0.4 0.8 1.2 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage -Vsd (Volts) Figure 6: Body-Diode Characteristics 5 Vds=-10V Id=-0.6A 4 200 3 Capacitance (pF) 150 Ciss -Vgs (Volts) 100 Coss 50 Crss 2 1 0 0.0 0.5 1.0 1.5 2.0 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 -Vds (Volts) Figure 8: Capacitance Characteristics 10.00 Tj(max)=150C, Ta=25C Rds(on) limited 1ms 10ms 0.1s 1s 10s DC 10Ps 100Ps 14 12 10 Tj(max)=150C Ta=25C 1.00 -Id (Amps) Power (W) 8 6 4 2 0.10 0.01 0.00 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=415C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd P 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 T Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance |
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